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mar. 2002 type name voltage class 10.5 max 4.5 2.5 2.5 0.8 1.0 3.6 0.2 1.3 0.5 2.6 12.5 min 3.8 max 16 max 7.0 3.2 0.2 4.5 23 1 4 ? 24 1 3 1 2 3 4 t 1 terminal t 2 terminal gate terminal t 2 terminal ? measurement point of case temperature outline drawing dimensions in mm to-220 mitsubishi semiconductor ? triac ? bcr5am medium power use non-insulated type, planar passivation type bcr5am application switching mode power supply, light dimmer, electric flasher unit, control of household equipment such as tv sets ?stereo ?refrigerator ?washing machine ?infrared kotatsu ?carpet, solenoid drivers, small motor control, copying machine, electric tool, other general purpose control applications ? t (rms) ........................................................................ 5a ? drm ....................................................................... 600v ? fgt ! , i rgt ! , i rgt # .......................... 20ma (10ma) ? 6 symbol v drm v dsm parameter repetitive peak off-state voltage ? 1 non-repetitive peak off-state voltage ? 1 voltage class unit v v maximum ratings 12 600 720 symbol i t (rms) i tsm i 2 t p gm p g (av) v gm i gm t j t stg parameter rms on-state current surge on-state current i 2 t for fusing peak gate power dissipation average gate power dissipation peak gate voltage peak gate current junction temperature storage temperature weight conditions commercial frequency, sine full wave 360 conduction, t c =103 c ? 3 60hz sinewave 1 full cycle, peak value, non-repetitive value corresponding to 1 cycle of half wave 60hz, surge on-state current typical value unit a a a 2 s w w v a c c g ratings 5 50 10.4 3 0.3 10 2 ?0 ~ +125 ?0 ~ +125 2.0 ? 1. gate open. refer to the page 6 as to the product guaranteed maximum junction temperature 150 c
mar. 2002 supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c performance curves mitsubishi semiconductor ? triac ? bcr5am medium power use non-insulated type, planar passivation type ? 2. measurement using the gate trigger characteristics measurement circuit. ? 3. case temperature is measured at the t2 terminal 1.5mm away from the molded case. ? 4. the contact thermal resistance r th (c-f) in case of greasing is 1.0 c/w. ? 5. test conditions of the critical-rate of rise of off-state commutating voltage is shown in he table below. ? 6. high sensitivity (i gt 10ma) is also available. (i gt item 1 ) test conditions commutating voltage and current waveforms (inductive load) 1. junction temperature t j =125 c 2. rate of decay of on-state commutating current (di/dt) c = 2.5a/ms 3. peak off-state voltage v d =400v symbol i drm v tm v fgt ! v rgt ! v rgt # i fgt ! i rgt ! i rgt # v gd r th (j-c) (dv/dt) c parameter repetitive peak off-state current on-state voltage gate trigger voltage ? 2 gate trigger current ? 2 gate non-trigger voltage thermal resistance critical-rate of rise of off-state commutating voltage test conditions t j =125 c, v drm applied t c =25 c, i tm =7a, instantaneous measurement t j =25 c, v d =6v, r l =6 ? , r g =330 ? t j =25 c, v d =6v, r l =6 ? , r g =330 ? t j =125 c, v d =1/2v drm junction to case ? 3 ? 4 t j =125 c unit ma v v v v ma ma ma v c/w v/ s typ. ! @ # ! @ # electrical characteristics limits min. 0.2 5 max. 2.0 1.8 1.5 1.5 1.5 20 ? 6 20 ? 6 20 ? 6 3.0 refer to the page 6 as to the product guaranteed maximum junction temperature 150 c 10 0 23 5710 1 40 20 23 5710 2 44 60 80 100 30 10 50 70 90 0 4.6 0.6 1.4 2.2 3.0 3.8 1.0 1.8 2.6 3.4 4.2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 10 1 t j = 125 c t j = 25 c maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz) ? 5
mar. 2002 mitsubishi semiconductor ? triac ? bcr5am medium power use non-insulated type, planar passivation type refer to the page 6 as to the product guaranteed maximum junction temperature 150 c 10 0 23 10 1 5710 2 23 5710 3 23 5710 4 10 2 7 5 3 2 10 1 7 5 3 2 7 5 3 2 10 1 v gd = 0.2v p gm = 3w v gm = 10v v gt = 1.5v i gt = 20ma t j = 25 c i gm = 2a p gm = 0.3w 23 10 1 5710 0 23 5 23 10 2 5710 3 23 5 710 1 23 5710 2 4.0 3.6 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 10 1 10 3 7 5 3 2 60 20 20 10 2 7 5 3 2 60 100 140 4 4 40 0 40 80 120 10 1 10 3 7 5 3 2 60 20 20 10 2 7 5 3 2 60 100 140 4 4 40 0 40 80 120 i fgt i i rgt i i rgt iii 8 6 5 3 1 0 8 0 1357 2 4 7 246 160 120 100 60 20 0 8 0 1357 40 80 140 246 typical example typical example 360 conduction resistive, inductive loads curves apply regardless of conduction angle 360 conduction resistive, inductive loads maximum on-state power dissipation on-state power dissipation (w) rms on-state current (a) allowable case temperature vs. rms on-state current case temperature ( c) rms on-state current (a) maximum transient thermal impedance characteristics (junction to case) transient thermal impedance ( c/w) conduction time (cycles at 60hz) gate voltage (v) gate current (ma) gate trigger current vs. junction temperature junction temperature ( c) gate trigger voltage vs. junction temperature junction temperature ( c) gate characteristics ( , ? and ?? ) 100 (%) gate trigger current (t j = t c) gate trigger current (t j = 25 c) 100 (%) gate trigger voltage ( t j = t c ) gate trigger voltage ( t j = 25 c )
mar. 2002 mitsubishi semiconductor ? triac ? bcr5am medium power use non-insulated type, planar passivation type refer to the page 6 as to the product guaranteed maximum junction temperature 150 c 140 40 40 60 20 0 20 60 80 100 120 10 5 7 5 3 2 10 4 7 5 3 2 10 3 7 5 3 2 10 2 160 120 100 60 20 0 3.2 0 0.4 1.2 2.0 2.8 40 80 140 0.8 1.6 2.4 10 2 7 5 3 2 60 20 20 10 1 7 5 3 2 60 100 140 4 4 40 0 40 80 120 10 0 140 60 20 20 60 100 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 40 0 40 80 120 160 120 100 60 20 0 8 0 1357 40 80 140 246 60 60 t2.3 120 120 t2.3 100 100 t2.3 160 100 80 40 20 0 140 40 40 60 20 0 20 60 80 140 100120 60 120 laching current vs. junction temperature laching current (ma) junction temperature ( c) holding current vs. junction temperature holding current (ma) junction temperature ( c) allowable ambient temperature vs. rms on-state current ambient temperature ( c) rms on-state current (a) allowable ambient temperature vs. rms on-state current ambient temperature ( c) rms on-state current (a) repetitive peak off-state current vs. junction temperature junction temperature ( c) junction temperature ( c) typical example typical example natural convection no fins curves apply regardless of conduction angle resistive, inductive loads v d = 12v typical example distribution t 2 + , g typical example t 2 + , g + t 2 , g ? ? ? typical example distribution curves apply regardless of conduction angle resistive, inductive loads natural convection all fins are black painted aluminum and greased breakover voltage vs. junction temperature 100 (%) repetitive peak off-state current ( t j = t c ) repetitive peak off-state current ( t j = 25 c ) 100 (%) breakover voltage ( t j = t c ) breakover voltage ( t j = 25 c )
mar. 2002 mitsubishi semiconductor ? triac ? bcr5am medium power use non-insulated type, planar passivation type refer to the page 6 as to the product guaranteed maximum junction temperature 150 c 10 1 10 3 7 5 3 2 10 0 23 5710 1 10 2 7 5 3 2 23 5710 2 4 4 44 i rgt iii i rgt i i fgt i 23 10 1 5710 2 23 5710 3 23 5710 4 120 0 20 40 60 80 100 140 160 7 5 3 2 10 0 23 5710 1 10 1 7 7 5 3 2 23 5710 2 4 4 44 10 0 commutation characteristics critical rate of rise of off-state commutating voltage (v/ s) rate of decay of on-state commutating current (a /ms) breakover voltage vs. rate of rise of off-state voltage rate of rise of off-state voltage (v/ s) 100 (%) breakover voltage ( dv/dt = xv/ s ) breakover voltage ( dv/dt = 1v/ s ) gate trigger current vs. gate current pulse width gate current pulse width ( s) 100 (%) gate trigger current ( tw ) gate trigger current ( dc ) i rgt iii i rgt i i fgt i typical example typical example t j = 125 c i quadrant iii quadrant typical example t j = 125 c i t = 4a = 500 s v d = 200v f = 3hz i quadrant iii quadrant minimum charac- teristics value supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c 6 ? 6 ? 6 ? 6v 6v 6v r g r g r g a v a v a v test procedure 1 test procedure 3 test procedure 2 gate trigger characteristics test circuits
mar. 2002 type name voltage class 10.5 max 4.5 2.5 2.5 0.8 1.0 3.6 0.2 1.3 0.5 2.6 12.5 min 3.8 max 16 max 7.0 3.2 0.2 4.5 23 1 4 ? 24 1 3 1 2 3 4 t 1 terminal t 2 terminal gate terminal t 2 terminal ? measurement point of case temperature outline drawing dimensions in mm to-220 mitsubishi semiconductor ? triac ? bcr5am medium power use non-insulated type, planar passivation type bcr5am application switching mode power supply, light dimmer, electric flasher unit, control of household equipment such as tv sets stereo refrigerator washing machine infrared kotatsu carpet, solenoid drivers, small motor control, copying machine, electric tool, other general purpose control applications (warning) 1. refer to the recommended circuit values around the triac before using. 2. be sure to exchange the specification before using. if not exchanged, general triacs will be supplied. i t (rms) ........................................................................ 5a v drm ....................................................................... 600v i fgt ! , i rgt ! , i rgt # .......................... 20ma (10ma) ? 6 symbol v drm v dsm parameter repetitive peak off-state voltage ? 1 non-repetitive peak off-state voltage ? 1 voltage class unit v v maximum ratings 12 600 720 symbol i t (rms) i tsm i 2 t p gm p g (av) v gm i gm t j t stg parameter rms on-state current surge on-state current i 2 t for fusing peak gate power dissipation average gate power dissipation peak gate voltage peak gate current junction temperature storage temperature weight conditions commercial frequency, sine full wave 360 conduction, t c =128 c ? 3 60hz sinewave 1 full cycle, peak value, non-repetitive value corresponding to 1 cycle of half wave 60hz, surge on-state current typical value unit a a a 2 s w w v a c c g ratings 5 50 10.4 3 0.3 10 2 40 ~ +150 40 ~ +150 2.0 ? 1. gate open. the product guaranteed maximum junction temperature 150 c (see warning.)
mar. 2002 supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c performance curves mitsubishi semiconductor ? triac ? bcr5am medium power use non-insulated type, planar passivation type ? 2. measurement using the gate trigger characteristics measurement circuit. ? 3. case temperature is measured at the t2 terminal 1.5mm away from the molded case. ? 4. the contact thermal resistance r th (c-f) in case of greasing is 1.0 c/w. ? 5. test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. ? 6. high sensitivity (i gt 10ma) is also available. (i gt item 1 ) test conditions commutating voltage and current waveforms (inductive load) 1. junction temperature t j =125 c/150 c 2. rate of decay of on-state commutating current (di/dt) c = 2.5a/ms 3. peak off-state voltage v d =400v symbol i drm v tm v fgt ! v rgt ! v rgt # i fgt ! i rgt ! i rgt # v gd r th (j-c) (dv/dt) c parameter repetitive peak off-state current on-state voltage gate trigger voltage ? 2 gate trigger current ? 2 gate non-trigger voltage thermal resistance critical-rate of rise of off-state commutating voltage test conditions t j =150 c, v drm applied t c =25 c, i tm =7a, instantaneous measurement t j =25 c, v d =6v, r l =6 ? , r g =330 ? t j =25 c, v d =6v, r l =6 ? , r g =330 ? t j =125 c/150 c, v d =1/2v drm junction to case ? 3 ? 4 t j =125 c/150 c unit ma v v v v ma ma ma v c/w v/ s typ. ! @ # ! @ # electrical characteristics limits min. 0.2/0.1 5/1 max. 2.0 1.8 1.5 1.5 1.5 20 ? 6 20 ? 6 20 ? 6 3.0 the product guaranteed maximum junction temperature 150 c (see warning.) 0.5 1.5 2.5 3.5 1.0 2.0 3.0 4.0 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 10 1 t j = 25 c t j = 150 c 10 0 23 5710 1 40 20 23 5710 2 44 60 80 100 30 10 50 70 90 0 maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz) ? 5
mar. 2002 the product guaranteed maximum junction temperature 150 c (see warning.) mitsubishi semiconductor ? triac ? bcr5am medium power use non-insulated type, planar passivation type 10 1 10 3 7 5 3 2 10 2 7 5 4 4 3 2 60 20 20 60 100 160 140 40 0 40 80 120 10 0 23 10 0 5710 1 23 5710 2 23 5710 3 7 5 3 2 10 1 7 5 3 5 2 7 5 10 1 3 2 v gd = 0.1v p gm = 3w v gm = 10v v gt = 1.5v i gt = 20ma t j = 25 c i gm = 2a p gm = 0.3w 10 0 10 2 5 10 1 5 7 2 3 7 2 3 10 3 5 7 2 3 60 20 20 60 100 160 140 40 0 40 80 120 i fgt i i rgt i i rgt iii 23 10 1 5710 0 23 5 23 10 2 5710 3 23 5 710 1 23 5710 2 4.0 3.6 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 8 6 5 3 1 0 8 0 1357 2 4 7 246 160 120 100 60 20 0 8 0 1357 40 80 140 246 typical example typical example 360 conduction resistive, inductive loads curves apply regardless of conduction angle 360 conduction resistive, inductive loads maximum on-state power dissipation on-state power dissipation (w) rms on-state current (a) allowable case temperature vs. rms on-state current case temperature ( c) rms on-state current (a) maximum transient thermal impedance characteristics (junction to case) transient thermal impedance ( c/w) conduction time (cycles at 60hz) gate voltage (v) gate current (ma) gate trigger current vs. junction temperature junction temperature ( c) gate trigger voltage vs. junction temperature junction temperature ( c) gate characteristics ( , ? and ?? ) 100 (%) gate trigger current (t j = t c) gate trigger current (t j = 25 c) 100 (%) gate trigger voltage ( t j = t c ) gate trigger voltage ( t j = 25 c )
mar. 2002 the product guaranteed maximum junction temperature 150 c (see warning.) mitsubishi semiconductor ? triac ? bcr5am medium power use non-insulated type, planar passivation type 160 120 100 60 20 0 8 0 1357 40 80 140 246 60 60 t2.3 120 120 t2.3 100 100 t2.3 160 120 100 60 20 0 3.2 0 0.4 1.2 2.0 2.8 40 80 140 0.8 1.6 2.4 10 2 7 5 3 2 10 1 7 5 3 2 4 4 10 0 60 20 20 60 100 140 160 40 0 40 80 120 10 3 7 5 3 2 7 5 3 2 7 5 3 2 10 2 10 1 10 0 60 20 20 60 100 160 140 40 0 40 80 120 10 3 7 5 3 2 10 2 10 4 7 5 3 2 10 5 7 5 3 2 10 6 7 5 3 2 60 20 20 60 100 160 140 40 0 40 80 120 160 100 80 40 20 0 140 60 120 60 20 20 60 100 160 140 40 0 40 80 120 laching current vs. junction temperature laching current (ma) junction temperature ( c) holding current vs. junction temperature holding current (ma) junction temperature ( c) allowable ambient temperature vs. rms on-state current ambient temperature ( c) rms on-state current (a) allowable ambient temperature vs. rms on-state current ambient temperature ( c) rms on-state current (a) repetitive peak off-state current vs. junction temperature junction temperature ( c) junction temperature ( c) typical example typical example v d = 12v typical example distribution t 2 + , g typical example t 2 + , g + t 2 , g ? ? ? typical example distribution curves apply regardless of conduction angle resistive, inductive loads natural convection all fins are black painted aluminum and greased breakover voltage vs. junction temperature 100 (%) repetitive peak off-state current ( t j = t c ) repetitive peak off-state current ( t j = 25 c ) 100 (%) breakover voltage ( t j = t c ) breakover voltage ( t j = 25 c ) natural convection no fins, curves apply regardless of conduction angle resistive, inductive loads
mar. 2002 the product guaranteed maximum junction temperature 150 c (see warning.) mitsubishi semiconductor ? triac ? bcr5am medium power use non-insulated type, planar passivation type 23 10 1 5710 2 23 5710 3 23 5710 4 120 0 20 40 60 80 100 140 160 23 10 1 5710 2 23 5710 3 23 5710 4 120 0 20 40 60 80 100 140 160 7 5 3 2 10 0 23 5710 1 10 2 10 1 7 7 5 3 2 23 57 10 0 7 5 3 2 10 0 23 5710 1 10 2 10 1 7 7 5 3 2 23 57 10 0 10 1 10 3 7 5 3 2 10 0 23 5710 1 10 2 7 5 3 2 23 5710 2 4 4 44 i rgt iii i rgt i i fgt i breakover voltage vs. rate of rise of off-state voltage (t j = 125 c) rate of rise of off-state voltage (v/ s) 100 (%) breakover voltage ( dv/dt = xv/ s ) breakover voltage ( dv/dt = 1v/ s ) typical example t j = 125 c i quadrant iii quadrant breakover voltage vs. rate of rise of off-state voltage (t j = 150 c) rate of rise of off-state voltage (v/ s) 100 (%) breakover voltage ( dv/dt = xv/ s ) breakover voltage ( dv/dt = 1v/ s ) typical example t j = 150 c i quadrant iii quadrant commutation characteristics (t j = 125 c) critical rate of rise of off-state commutating voltage (v/ s) rate of decay of on-state commutating current (a /ms) typical example t j = 125 c i t = 4a = 500 s v d = 200v f = 3hz i quadrant iii quadrant minimum charac- teristics value commutation characteristics (t j = 150 c) critical rate of rise of off-state commutating voltage (v/ s) rate of decay of on-state commutating current (a /ms) typical example t j = 150 c i t = 4a = 500 s v d = 200v f = 3hz i quadrant iii quadrant minimum charac- teristics value supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c gate trigger current vs. gate current pulse width gate current pulse width ( s) 100 (%) gate trigger current ( tw ) gate trigger current ( dc ) typical example
mar. 2002 the product guaranteed maximum junction temperature 150 c (see warning.) mitsubishi semiconductor ? triac ? bcr5am medium power use non-insulated type, planar passivation type c 1 c 1 = 0.1~0.47 f r 1 = 47~100 ? c 0 = 0.1 f r 0 = 100 ? c 0 r 0 r 1 6 ? 6 ? 6 ? 6v 6v 6v r g r g r g a v a v a v load recommended circuit values around the triac test procedure 1 test procedure 3 test procedure 2 gate trigger characteristics test circuits

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